Semiconductor device and method of manufacturing the same
US7888737B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2009 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Aug 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a monocrystalline substrate; an inter-layer film formed on the monocrystalline substrate; a contact hole penetrating the inter-layer film and partially exposing an upper surface of the monocrystalline substrate; a sidewall formed on an inner surface of the contact hole; a plurality of first monocrystalline layers which include few defects, fill the contact hole, and cover the inter-layer film; and a plurality of second monocrystalline layers which include many defects and cover the sidewall and an upper surface of the inter-layer film so as to be sandwiched between the first monocrystalline layers and the inter-layer film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.