Semiconductor device and method of manufacturing the same
US7888740B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2007 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Dec 25, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/811
Abstract
The semiconductor device includes a first MIS transistor including a gate insulating film 92, a gate electrode 108 formed on the gate insulating film 92 and source/drain regions 154, a second MIS transistor including a gate insulating film 96 thicker than the gate insulating film 92, a gate electrode 108 formed on the gate insulating film 96, source/drain regions 154 and a ballast resistor 120 connected to one of the source/drain regions 154, a salicide block insulating film 146 formed on the ballast resistor 120 with an insulating film 92 thinner than the gate insulating film 96 interposed therebetween, and a silicide film 156 formed on the source/drain regions 154.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.