Semiconductor device having a fin field effect transistor
US7888751B2 · kind B2 · utility
10Cited by
4References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 14, 2009 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Apr 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
Abstract
A semiconductor device includes a fin field effect transistor configured to include at least a first fin and a second fin. Threshold voltage of the first fin and threshold voltage of the second fin are different from each other in the fin field effect transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.