Backside illuminated imaging sensor with improved infrared sensitivity
US7888763B2 · kind B2 · utility
31Cited by
21References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2008 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Feb 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A backside illuminated imaging sensor includes a semiconductor layer and an infrared detecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel includes a photodiode region formed within the semiconductor layer. The infrared detecting layer is disposed above the front surface of the semiconductor layer to receive infrared light that propagates through the imaging sensor from the back surface of the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.