Solid-state imaging device comprising a signal storage section including a highly doped area
US7889255B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2005 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Oct 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Each of the unit cells provided on a semiconductor substrate of a solid-state imaging device comprises a first p-type well which isolates the semiconductor substrate into an n-type photoelectric conversion region, a second p-type well which is formed in the surface of the photoelectric conversion region and in which a signal scanning circuit section is formed, and a signal storage section which is comprised of a highly doped n-type layer which is formed in the surface of the photoelectric conversion region apart from the second p-type well and higher in impurity concentration than the photoelectric conversion region. The signal storage section having its part placed under a signal readout gate adapted to transfer a packet of signal charge from the storage section to the signal scanning circuit section and its part at which the potential becomes deepest located under the readout gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.