Treatment of trim photomask data for alternating phase shift lithography
US7890912B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Nov 8, 2007 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Jan 13, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/70
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In accordance with the invention, there is a method of designing a lithography mask. The method can comprise generating initial phase photomask data and initial trim photomask data from a first set of data from a first drawn layer and/or layout and a second set of data from a second drawn layer, combining the initial phase photomask data with the first set of data to form a combined layer, inspecting for gaps in the combined layer, and processing the gaps in the combined layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.