Patent · US Active

Method for sensor fabrication and related sensor and system

US7891252B2 · kind B2 · utility

4Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 30, 2009
Grant dateFeb 22, 2011
Priority date
Expiry dateMay 4, 2029

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/42
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A method includes forming multiple trenches in a first wafer, forming a sensor structure on a first surface of a second wafer, and bonding the first wafer and the second wafer. The method also includes etching a second surface of the second wafer to form a sensor diaphragm in the second wafer. The method further includes removing a portion of the first wafer by cutting the first wafer in multiple areas of the first wafer associated with the trenches. A sensor includes a substrate and a surface acoustic wave (SAW) resonator on a first surface of the substrate. The sensor also includes a bonding pad electrically coupled to the SAW resonator and a notch formed in a second surface of the substrate. The sensor further includes a cover separated from the first surface of the substrate by a spacer. The SAW resonator is located between the cover and the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.