Preparation of single-crystalline polyalkylthiophene structures by surface-induced self-assembly
US7892355B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 20, 2007 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Dec 22, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08G2261/3223
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A high quality single-crystalline polyalkylthiophene structure can be easily prepared by the inventive method which comprises: (i) dissolving polyalkylthiophene in an organic solvent at a temperature ranging from 50 to 100° C., sequentially quenching the polyalkylthiophene solution at a temperature ranging from 25 to 40° C. and then at −5 to 15° C., to obtain a self-seeding polyalkylthiophene solution; and (ii) applying the self-seeding polyalkylthiophene solution obtained in step (i) to one surface of a nano-template having a hydrophobic supramolecule coating layer formed thereon to induce self-assembly and crystallization of polyalkylthiophene on the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.