Photomask and method of making thereof
US7892705B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2007 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Jul 18, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The disclosure is related to photomasks used in photolithography and methods of making photomasks. The method involves providing a transparent substrate with one or more reflective films disposed over a surface of the substrate, applying a photoresist to the solution-contacted reflective film and forming a pattern in the photoresist that is transferred to the substrate, and developing the pattern on the substrate by removing the remaining portions of the photoresist. The substrate carrying the patterned reflective film is then contacted with a solution comprising oxyanions. The disclosure is also related to photomasks made using the disclosed method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.