Method of manufacturing image sensor
US7892877B2 · kind B2 · utility
1Cited by
2References
22Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 27, 2007 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Jul 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/147
Abstract
Provided is a method of manufacturing an image sensor which may include forming a plurality of photoelectric converters on a semiconductor substrate, forming a silicon nitride (SiN) film on the plurality of photoelectric converters, supplying plasma gas including hydrogen to the SiN film, and performing a heat treatment on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.