Manufacture of cadmium mercury telluride on patterned silicon
US7892879B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2005 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Mar 31, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This invention relates to the manufacture of Cadmium Mercury Telluride (CMT) on patterned silicon, especially to growth of CMT on silicon substrates bearing integrated circuitry. The method of the invention involves growing CMT in selected growth windows on the silicon substrate by first growing one or more buffer layers by MBE and then growing the CMT by MOVPE. The growth windows may be defined by masking the area outside of the growth windows. Growth within the growth windows is crystalline whereas any growth outside the growth windows is polycrystalline and can be removed by etching. The invention offers a method of growing CMT structures directly on integrated circuits removing the need for hybridisation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.