Fabricating a device with a diamond layer

US7892881B2 · kind B2 · utility

Assignee

• Raytheon Company · US

Inventors

• Mary Y. Chen · Oak Park, US
• Peter W. Deelman · Calabasas, US

Key dates

• Filing date: Feb 23, 2009
• Grant date: Feb 22, 2011
• Expiry date: Jun 8, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

In one aspect, a method includes forming a silicon dioxide layer on a surface of a diamond layer disposed on a gallium nitride (GaN)-type layer. The method also includes etching the silicon dioxide layer to form a pattern. The method further includes etching portions of the diamond exposed by the pattern.