TFT-LCD pixel unit and method for manufacturing the same
US7892897B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2007 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | May 18, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/674
Abstract
A thin film transistor liquid crystal display (TFT-LCD) pixel unit and a method for manufacturing the same. The pixel unit comprises a gate line and a gate electrode formed on a substrate and a first gate insulating layer, an active layer, and a doped layer sequentially that are formed on the gate line and the gate electrode. An intercepting trench is formed on the gate line to cut off the doped layer and the active layer on the gate line. A second insulating layer covers the intercepting trench and the substrate where the gate line and the gate electrode are not formed. A pixel electrode is formed on the second insulating layer and is integrated with the second source/drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.