Formation of strained Si channel and Si1-xGex source/drain structures using laser annealing
US7892905B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2005 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Oct 12, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/938
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a strained channel region for a MOSFET device via formation of adjacent silicon-germanium source/drain regions, has been developed. The process features either blanket deposition of a silicon-germanium layer, or selective growth of a silicon-germanium layer on exposed portions of a source/drain extension region. A laser anneal procedure results in formation of a silicon-germanium source/drain region via consumption of a bottom portion of the silicon-germanium layer and a top portion of the underlying source/drain region. Optimization of the formation of the silicon-germanium source/drain region via laser annealing can be achieved via a pre-amorphization implantation (PAI) procedure applied to exposed portions of the source/drain region prior to deposition of the silicon-germanium layer. Un-reacted top portions of the silicon-germanium layer are selectively removed after the laser anneal procedure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.