SOI substrate and method for manufacturing SOI substrate
US7892934B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2006 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Nov 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
On the side of a surface (the bonding surface side) of a single crystal Si substrate, a uniform ion implantation layer is formed at a prescribed depth (L) in the vicinity of the surface. The surface of the single crystal Si substrate and a surface of a transparent insulating substrate as bonding surfaces are brought into close contact with each other, and bonding is performed by heating the substrates in this state at a temperature of 350° C. or below. After this bonding process, an Si—Si bond in the ion implantation layer is broken by applying impact from the outside, and a single crystal silicon thin film is mechanically peeled along a crystal surface at a position equivalent to the prescribed depth (L) in the vicinity of the surface of the single crystal Si substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.