Quantum well structure
US7893425B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2004 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Oct 2, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/146
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A quantum well structure according to the invention includes a quantum well layer (107) arranged between two barrier layers (109, 112). It is distinguished in that at least one of the barrier layers (109) includes nanostructures (110) which compensate or modulate a lateral homogeneity of the barrier layer (109), that exists without the nanostructures (110), that is to say a homogeneity in the directions extending perpendicularly to the stacking direction of the layers in the quantum well structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.