Single-charge tunnelling device
US7893426B2 · kind B2 · utility
1Cited by
5References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2006 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Sep 17, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F1/404
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A single-electron transistor (1) has an elongate conductive channel (2) and a side gate (3) formed in a 5 nm-thick layer (4) of Ga0.98Mn0.02As. The single-electron transistor (1) is operable, in a first mode, as a transistor and, in a second mode, as non-volatile memory.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.