Schottky diode having low breakdown voltage and method for fabricating the same
US7893442B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2007 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Dec 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/23
Abstract
Provided are a schottky diode having an appropriate low breakdown voltage to be used in a radio frequency identification (RFID) tag and a method for fabricating the same. The schottky diode includes a silicon substrate having a structure in which an N-type well is formed on a P-type substrate, an insulating layer surrounding a circumference of the N-type well so as to electrically separate the N-type well from the P-type substrate, an N+ doping layer partly formed in a portion of a region of an upper surface of the N-type well, an N− doping layer partly formed in the other portion of a region of the upper surface of the N-type well, a cathode formed on the N+ doping layer, and an anode formed on the N− doping layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.