Semiconductor device having lateral MOS transistor and zener diode
US7893458B2 · kind B2 · utility
4Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2007 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Jun 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A semiconductor device includes: a semiconductor substrate; a lateral MOS transistor disposed in the substrate; a Zener diode disposed in the substrate; and a capacitor disposed in the substrate. The transistor includes a drain and a gate, and the diode and the capacitor are coupled in series between the drain and the gate. This device has minimized dimensions and high switching speed. Further, both of a switching loss and a surge voltage are improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.