Semiconductor photodiode and method of manufacture thereof

US7893464B2 · kind B2 · utility

Assignee

• JDS Uniphase Corporation · US

Inventors

• Syn-Yem Hu · San Jose, US
• Zhong Pan · San Jose, US

Key dates

• Filing date: Mar 28, 2008
• Grant date: Feb 22, 2011
• Expiry date: Feb 4, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/544

Abstract

A method of manufacture of an avalanche photodiode involving a step of making a recess in a top window layer of an avalanche photodiode layer stack, such that a wall surrounding the recess runs smoothly and gradually from the level of the recess to the level of the window layer. Further, diffusing a dopant over the entire window layer area so as to form a p-n junction at the bottom of the recess, and providing a first electrical isolation region around the recess by buried ion implantation or wet oxidation in order to limit the flow of electrical current to the p-n junction. Forming an isolation trench around the photodiode and a second electrical isolation region by ion implantation into the trench such that the second electrical isolation region runs through the absorption layer of the photodiode.