Image sensor and method for fabricating the same
US7893469B2 · kind B2 · utility
5Cited by
3References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 7, 2009 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Dec 7, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
An image sensor includes a trench formed by a shallow trench isolation (STI) process, a channel stop layer formed over a substrate in the trench, an isolation structure filled in the trench, and a photodiode formed in the substrate adjacent to a sidewall of the trench. In more detail of the image sensor, a trench is formed in a substrate through a STI process, and a channel stop layer is formed over the substrate in the trench. An isolation structure is formed in the trench, and a photodiode is formed in the substrate adjacent to a sidewall of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.