Thin film transistor
US7893495B2 · kind B2 · utility
99Cited by
1References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2009 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Jan 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A thin film transistor is disclosed comprising comprises a substrate, a dielectric layer, and a semiconductor layer. The semiconductor layer, which is crystalline zinc oxide preferentially oriented with the c-axis perpendicular to the plane of the dielectric layer or substrate, is prepared by liquid depositing a zinc oxide nanodisk composition. The thin film transistor has good mobility and on/off ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.