Transistor and CVD apparatus used to deposit gate insulating film thereof
US7893509B2 · kind B2 · utility
6Cited by
1References
2Claims
0Family size
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Key dates
| Filing date | May 29, 2009 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | May 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
Abstract
In a transistor adapted to suppress characteristic degradation resulting from fluorine contained in a deposited film, the concentration of fluorine contained in a gate insulating film is reduced to 1.0×1020 atoms/cm3 or less. As a result, the transistor can provide excellent reliability even when it is continuously driven for a long period of time at a relatively high temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.