High temperature-stable sensor

US7893510B2 · kind B2 · utility

Assignee

• Heraeus Sensor Technology GmbH · DE

Inventors

• Karlheinz Wienand · Aschaffenburg, DE
• Karlheinz Ullrich · Groß-Umstadt, DE

Key dates

• Filing date: Jul 12, 2005
• Grant date: Feb 22, 2011
• Expiry date: Jul 12, 2025

Classification

• Technology area (CPC G): Physics
• CPC primary: G01N27/4075
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A high temperature-stable sensor is provided in which electrodes on a substrate or an insulation layer are in contact with a sensitive layer, wherein the electrodes have platinum, rhodium, or iridium or an electrically conductive oxide layer. For this purpose, an intermediate product is provided as a platform chip, which has a deposited layer made of platinum, rhodium, or iridium or an alloy of platinum, rhodium, or iridium and is covered by an electrically conductive oxide. From the deposited layer, a conductive structure is formed and thus a platform chip is created with an electrically conductive structure subject to external influences. This structure has an electrically conductive oxide and/or its parts have long-term, stable characteristic resistance curves under high-temperature loading above about 500° C., especially between about 600° C. and 950° C. A sensor with a gas-sensitive layer formed as a gas-sensitive sensor is preferred.