Patent · US Active

Gallium nitride switch methodology

US7893791B2 · kind B2 · utility

17Cited by

7References

20Claims

0Family size

Assignee

The Boeing Company · US

Inventors

Yin Tat Ma · Diamond Bar, US
Jonathan B. Hacker · Thousand Oaks, US
Karim S. Boutros · Moorpark, US

Key dates

Filing date	Oct 22, 2008
Grant date	Feb 22, 2011
Priority date	—
Expiry date	Apr 21, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01P1/15
WIPO fieldTelecommunications
WIPO sectorElectrical engineering

Abstract

Devices and systems for using a Gallium Nitride-based (GaN-based) transistor for selectively switching signals are provided. A first transmission line is configured to connect a common connection and a first connection. A first Gallium-Nitride-based (GaN-based) transistor has a first terminal coupled to the first transmission line at a first point, a second terminal coupled to a relative ground, and a third terminal configured to be coupled to a first control connection. A second GaN-based transistor has a first terminal coupled to the first transmission line at a second point, a second terminal configured to be coupled to the relative ground, and a third terminal configured to be coupled to the first control connection.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.