Strain measuring device
US7893810B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2007 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Nov 11, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L1/2293
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A strain measuring device according to the present invention includes a bridged circuit comprising a p-type impurity diffused resistor as a strain detective portion and a bridged circuit comprising an n-type impurity diffused resistor as a strain detective portion in a semiconductor single crystalline substrate, and sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, it is preferable that the impurity diffused resistor be configured to be a meander shape comprising strip lines and connecting portions. Moreover, it is preferable that the number of strip lines in the p-type impurity diffused resistor be smaller than that in the n-type impurity diffused resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.