Hermetic implantable sensor
US7894870B1 · kind B1 · utility
43Cited by
13References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2004 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | May 3, 2028 |
Classification
- Technology area (CPC A)Human Necessities
- CPC primaryA61B2562/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
At least one conductor is formed at a preselected location on a substrate made of a first insulating material having a high temperature resistance. The conductor is made from a solidified electrically conductive thick film material. A coating made of a second insulating material is formed over the substrate to hermetically seal at least a portion of the conductor. An exposed distal region of the conductor provides a detection electrode. The conductor has a reduced porosity that inhibits migration of fluid or constituents thereof through the conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.