Ultrathin ferromagnetic/antiferromagnetic coupling film structure and fabrication method thereof
US7897200B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Jul 31, 2008 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Nov 28, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24942
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention provides a ferromagnetic/antiferromagnetic coupling film structure and a fabrication method thereof. The structure includes an antiferromagnetic layer of cobalt oxide having a thickness of 2 to 15 monolayers and formed on a substrate at a temperature ranging from 700K to 900K; and a ferromagnetic layer of cobalt having a thickness of at least one monolayer for being formed on the antiferromagnetic layer of cobalt oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.