Hybrid nanocomposite semiconductor material, and method of producing inorganic semiconductor therefor
US7897417B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Jul 11, 2006 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Mar 3, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/834
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Hybrid semiconductor materials have an inorganic semiconductor incorporated into a hole-conductive fluorene copolymer film. Nanometer-sized particles of the inorganic semiconductor may be prepared by mixing inorganic semiconductor precursors with a steric-hindering coordinating solvent and heating the mixture with microwaves to a temperature below the boiling point of the solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.