Method for fabricating pixel structure
US7897442B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2008 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Oct 31, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13439
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fabricating a pixel structure is disclosed. A substrate is provided. A first conductive layer is formed on the substrate, and a first shadow mask exposing a portion of the first conductive layer is disposed over the first conductive layer. Laser is used to irradiate the first conductive layer for removing the part of the first conductive layer and forming a gate. A gate dielectric layer is formed on the substrate to cover the gate. A channel layer is formed on the gate dielectric layer over the gate. A source and a drain are formed on the channel layer and respectively above both sides of the gate. A patterned passivation layer is formed to cover the channel layer and expose the drain. An electrode material layer is formed to cover the patterned passivation layer and the exposed drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.