Pixel structure and method for manufacturing the same

US7897449B2 · kind B2 · utility

Assignee

• Au Optronics Corporation · TW

Inventors

• Han-Tu Lin · Zhuolan Township, TW
• Chien-Hung Chen · Taipei, TW

Key dates

• Filing date: Mar 21, 2008
• Grant date: Mar 1, 2011
• Expiry date: Jul 19, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60

Abstract

A method for manufacturing a pixel structure is provided. First, a first mask process is performed to form a patterned first metal layer on a substrate, wherein the patterned first metal layer includes a gate. Next, a second mask process is performed to form a patterned insulating layer and a patterned semiconductor layer over the gate, wherein the patterned insulating layer is disposed on the patterned first metal layer, and the patterned semiconductor layer is disposed on the patterned insulating layer. Then, a third mask process is performed to define a thin film transistor (TFT) and a pixel electrode connected thereto and to form a passivation layer to cover the TFT.