Metal-insulator-metal capacitor and fabrication method thereof
US7897454B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2007 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Jan 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a metal-insulator-metal capacitor, which comprises a semiconductor substrate; an interlayer dielectric layer disposed on the semiconductor substrate; and an insulation trench and two metal trenches all running through the interlayer dielectric layer and allowing the semiconductor substrate to be exposed; wherein the metal trenches being located on each side of the insulation trench and sharing a trench wall with the insulation trench respectively, the insulation trench being filled with insulation material as an insulation structure, the metal trenches being filled with metal material as electrodes of the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.