Patent · US Active

Inducement of strain in a semiconductor layer

US7897493B2 · kind B2 · utility

7Cited by
25References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 7, 2007
Grant dateMar 1, 2011
Priority date—
Expiry dateJun 1, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/822
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Strain is induced in a semiconductor layer. Embodiments include inducing strain by, for example, creation of free surfaces.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.