Overvoltage-protected light-emitting semiconductor device, and method of fabrication
US7897497B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2008 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Aug 26, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light-generating semiconductor region is grown by epitaxy on a silicon substrate. The light-generating semiconductor region is a lamination of layers of semiconducting nitrides containing a Group III element or elements. The silicon substrate has a p-type impurity-diffused layer formed therein by thermal diffusion of the Group III element or elements from the light-generating semiconductor region as a secondary product of the epitaxial growth of this region on the substrate. The p-type impurity-diffused layer is utilized as a part of overvoltage protector diodes which are serially interconnected with each other and in parallel with the LED section of the device between a pair of electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.