Semiconductor wafer and method of manufacturing the same and method of manufacturing semiconductor device
US7897509B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2010 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Jun 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the trench; a gate electrode film and a metal film formed on an upper surface of the insulating member; a multilevel columnar wiring via formed on an upper surface of the metal film; and an external connection electrode formed electrically connected to the metal film via the multilevel columnar wiring via. In this manner, it is unnecessary to have a new process of dry etching to form a through-hole electrode after thinning the wafer and equipment development. Moreover, introduction of a specific design enables formation of through-hole electrodes with significantly reduced difficulties of respective processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.