Methods of forming integrated circuit devices including a multi-layer structure with a contact extending therethrough
US7897512B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2008 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Jan 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Integrated circuit devices have a first substrate layer and a first transistor on the first substrate layer. A first interlayer insulating film covers the first transistor. A second substrate layer is on the first interlayer insulating film and a second transistor is on the second substrate layer. A second interlayer insulating film covers the second transistor. A contact extends through the second interlayer insulating film, the second substrate layer and the first interlayer insulating film. The contact includes a lower contact and an upper contact that contacts an upper surface of the lower contact to define an interface therebetween. The interface is located at a height no greater than a height of a top surface of the second substrate and greater than a height of a bottom surface of the second substrate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.