Low dielectric constant plasma polymerized thin film and manufacturing method thereof
US7897521B2 · kind B2 · utility
3Cited by
21References
19Claims
0Family size
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Key dates
| Filing date | Aug 14, 2008 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Mar 27, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB05D3/0254
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a low dielectric constant plasma polymerized thin film using linear organic/inorganic precursors and a method of manufacturing the low dielectric constant plasma polymerized thin film through plasma enhanced chemical vapor deposition and annealing using an RTA apparatus. The low dielectric constant plasma polymerized thin film is effective for the preparation of multilayered metal thin films having a thin film structure with very high thermal stability, a low dielectric constant, and superior mechanical properties.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.