Patent · US Active

Phase-change memory cell with a patterned layer

US7897952B2 · kind B2 · utility

10Cited by

3References

13Claims

0Family size

Assignee

NXP B.V. · NL

Inventors

Dirk Wouters · Heverlee, BE
Ludovic Goux · Hannut, BE
Judith Lisoni · Heverlee, BE
Thomas Gille · Heverlee, BE

Key dates

Filing date	May 18, 2006
Grant date	Mar 1, 2011
Priority date	—
Expiry date	Aug 28, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG11C13/0004
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A phase-change-material memory cell is provided. The cell comprises at least one patterned layer of a phase-change material, and is characterized in that this patterned layer comprises at least two regions having different resistivities. If the resistivity of the phase-change material is higher in a well-defined area with limited dimensions (“hot spot”) than outside this area, then, for a given current flow between the electrodes, advantageously more Joule heat will be generated within this area compared to the area of the phase-change material where the resistivity is lower.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.