Thiazole-based semiconductor compound and organic thin film transistor using the same
US7897963B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2008 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Feb 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/472
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.