Patent · US Active

Method for manufacturing flat substrates

US7897966B2 · kind B2 · utility

1Cited by

15References

13Claims

0Family size

Assignee

Oerlikon Solar AG, Trubbach · CH

Inventors

Hai Tran Quoc · Orsay, FR
Jerome Villette · Le Plessis-Robinson, FR

Key dates

Filing date	Feb 18, 2009
Grant date	Mar 1, 2011
Priority date	—
Expiry date	Feb 18, 2029

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

For avoiding the metallic inner surface of a PECVD reactor to influence thickness uniformity and quality uniformity of a μc-Si layer (19) deposited on a large-surface substrate, (15) before each substrate is single treated at least parts of the addressed wall are precoated with a dielectric layer (13).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.