Light-emitting device of field-effect transistor type
US7897976B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2003 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Feb 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
The invention of this application is a field-effect transistor type light-emitting device having an electron injection electrode, i.e. a source electrode, a hole injection electrode, i.e. a drain electrode, an emission active member disposed between the source electrode and the drain electrode so as to contact with both electrodes, and a field application electrode, i.e. a gate electrode, for inducing electrons and holes in the emission active member, which is disposed in the vicinity of the emission active member via an electrically insulating member or an insulation gap. The emission active member is made of an inorganic semiconductor material having both an electron transporting property and a hole transporting property.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.