Single photon detector and associated methods for making the same
US7898001B2 · kind B2 · utility
2Cited by
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15Claims
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Key dates
| Filing date | Dec 3, 2008 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Dec 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/225
Abstract
A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is in the semiconductor substrate and at least partially surrounds the photon avalanche detector. A passivation layer of the first conductivity type is in contact with the guard ring to reduce an electric field at an edge of the photon avalanche detector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.