Semiconductor heterostructure diodes

US7898004B2 · kind B2 · utility

Assignee

• Transphorm Inc. · US

Inventors

• Yifeng Wu · Goleta, US
• Umesh Mishra · Montecito, US
• Primit Parikh · Goleta, US
• Rongming Chu · Craydon Court, US
• Ilan Ben-Yaacov · Goleta, US
• Likun Shen · Goleta, US

Key dates

• Filing date: Dec 10, 2008
• Grant date: Mar 1, 2011
• Expiry date: Jan 16, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/513

Abstract

Planar Schottky diodes for which the semiconductor material includes a heterojunction which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is on top of the upper semiconductor layer and forms a Schottky contact with that layer. A metal cathode contact is connected to the 2DEG, forming an ohmic contact with the layer containing the 2DEG.