MEMS vibrating structure using a single-crystal piezoelectric thin-film layer having domain inversions
US7898158B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2008 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Aug 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2009/241
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a micro-electro-mechanical systems (MEMS) vibrating structure supported by a MEMS anchor system, and includes a single-crystal piezoelectric thin-film layer having domain inversions, which determine certain vibrational characteristics of the MEMS vibrating structure. The MEMS vibrating structure may have dominant lateral vibrations or dominant thickness vibrations. The single-crystal piezoelectric thin-film layer may include Lithium Tantalate or Lithium Niobate, and may provide MEMS vibrating structures with precise sizes and shapes, which may provide high accuracy and enable fabrication of multiple resonators having different resonant frequencies on a single substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.