Semiconductor memory device and method of writing into semiconductor memory device
US7898839B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 5, 2009 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Mar 29, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In the semiconductor memory device having a resistance memory element, a first transistor having a drain terminal connected to one end of the resistance memory element and a source terminal connected to a ground voltage, and a second transistor having source terminal connected to the resistance memory element, when a write voltage is applied to the resistance memory element via the second transistor to switch the resistance memory element from a low resistance state to a high resistance state, a voltage is controlled to be a value which is not less than a reset voltage and less than a set voltage by applying to a gate terminal of the second transistor a voltage which is not less than a total of the reset voltage and a threshold voltage of the second transistor and is less than a total of the set voltage and the threshold voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.