Masked laser anneal during fabrication of backside illuminated image sensors

US7901974B2 · kind B2 · utility

Assignee

• OmniVision Technologies, Inc. · US

Inventors

• Vincent Venezia · Los Gatos, US
• Hsin-Chih Tai · San Jose, US
• Duli Mao · Sunnyvale, US
• Yin Qian · Milpitas, US

Key dates

• Filing date: Jul 23, 2008
• Grant date: Mar 8, 2011
• Expiry date: May 20, 2029

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/949

Abstract

A technique for fabricating an array of imaging pixels includes fabricating front side components on a front side of the array. After fabricating the front side components, a dopant layer is implanted on a backside of the array. A mask is formed over the dopant layer to selectively expose portions of the dopant layer. Next, the exposed portions of the dopant layer are laser annealed. Alternatively, the mask may be disposed over the backside prior to the formation of the dopant layer and the dopants implanted through the exposed portions and subsequently laser annealed.