Patent · US Active

Graded high germanium compound films for strained semiconductor devices

US7902009B2 · kind B2 · utility

407Cited by

1References

10Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Danielle Simonelli · Beaverton, US
Anand S. Murthy · Beaverton, US

Key dates

Filing date	Dec 11, 2008
Grant date	Mar 8, 2011
Priority date	—
Expiry date	Jan 29, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/691
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Embodiments of an apparatus and methods for providing a graded high germanium compound region are generally described herein. Other embodiments may be described and claimed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.