Manufacturing method of semiconductor device
US7902068B2 · kind B2 · utility
4Cited by
4References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2007 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Jul 24, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one aspect of the present invention, a method of fabricating a semiconductor device may include forming a sacrificial film on a substrate, forming an insulating film on the sacrificial film, forming a plurality of first openings in the sacrificial film and the insulating film in a first region and a second region, depositing a conductive material in the plurality of the first openings, forming a second opening in the insulating film in the second region so as to expose the sacrificial film, and removing the sacrificial film in the first region via the second opening in the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.