Patent · US Active

Passivation layer for a circuit device and method of manufacture

US7902083B2 · kind B2 · utility

9Cited by
10References
35Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 21, 2010
Grant dateMar 8, 2011
Priority date
Expiry dateJan 21, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/30107
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

According to one embodiment of the disclosure, a method for passivating a circuit device generally includes providing a substrate having a substrate surface, forming an electrical component on the substrate surface, and coating the substrate surface and the electrical component with a first protective dielectric layer. The first protective dielectric layer is made of a generally moisture insoluble material having a moisture permeability less than 0.01 gram/meter2/day, a moisture absorption less than 0.04 percent, a dielectric constant less than 10, a dielectric loss less than 0.005, a breakdown voltage strength greater than 8 million volts/centimeter, a sheet resistivity greater than 1015 ohm-centimeter, and a defect density less than 0.5/centimeter2.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.