N-type transistor, production methods for n-type transistor and n-type transistor-use channel, and production method of nanotube structure exhibiting n-type semiconductor-like characteristics
US7902089B2 · kind B2 · utility
13Cited by
1References
8Claims
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Key dates
| Filing date | Feb 10, 2006 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Oct 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object of the present invention is to provide a new n-type transistor, different from the prior art, using a channel having a nanotube-shaped structure, and having n-type semiconductive properties. To realize this, a film of a nitrogenous compound 6 is formed directly on a channel 5 of a transistor 1 comprising a source electrode 2, a drain electrode 3, a gate electrode 4 and the n-type channel 5 having a nanotube-shaped structure and provided between the source electrode 2 and the drain electrode 3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.